کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1594305 1515661 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermopower and thermally induced domain wall motion in (Ga, Mn)As
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Thermopower and thermally induced domain wall motion in (Ga, Mn)As
چکیده انگلیسی

We study two reciprocal thermal effects in the ferromagnetic semiconductor (Ga, Mn)As by scattering theory: domain wall motion induced by a temperature gradient and heat currents pumped by a moving domain wall. The effective out-of-plane thermal spin transfer torque parameter PQβQPQβQ, which governs the coupling between heat currents and a magnetic texture, is found to be of the order of unity. Unpinned domain walls are predicted to move at speed 10 m/s in temperature gradients of the order 10 K/μm. The cooling power of a moving domain wall only compensates the heating due to friction losses at ultra-low domain wall velocities of about 0.07 m/s. The Seebeck coefficient is found to be of the order 100–500 μV/K at T=10K, in good agreement with recent experiments.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 11–12, March 2010, Pages 461–465
نویسندگان
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