کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594366 | 1515665 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Trapping centers and their distribution in Tl2In2Se3S layered single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thermally stimulated current (TSC) measurements have been carried out on Tl2In2Se3S layered single crystals in the temperature range of 10-175 K. The TSC spectra reveal the presence of two peaks (A and B). The electronic traps' distributions have been analyzed by different light illumination temperature techniques. It was revealed that the obtained traps' distribution can be described as an exponential one. The variations of one order of magnitude in the traps' density for every 30 meV (A peak) and 59 meV (B peak) were estimated. Moreover, the mean activation energy, attempt-to-escape frequency, capture cross section and concentration of the traps were determined.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 3â4, January 2010, Pages 176-180
Journal: Solid State Communications - Volume 150, Issues 3â4, January 2010, Pages 176-180
نویسندگان
I. Guler, N.M. Gasanly,