کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1594433 1515694 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Kondo resonance in an AC driven quantum dot subjected to finite bias
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Kondo resonance in an AC driven quantum dot subjected to finite bias
چکیده انگلیسی
We employ the time-dependent non-crossing approximation to study the time-averaged conductance for a single electron transistor in the Kondo regime when the dot level is sinusoidally driven from its equilibrium position by means of a gate voltage in finite bias. We find that the average conductance exhibits significant deviation from the monotonic reduction when the applied bias is equal to the driving frequency of the dot level. We investigate the effect of the temperature and the driving frequency on the observed enhancement. We attribute this behaviour to the overlap of the satellite Kondo peaks with the split Kondo resonances formed at each lead's Fermi level. We display the spectral function to put our interpretation onto more rigorous footing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 148, Issues 5–6, November 2008, Pages 230-233
نویسندگان
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