کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594472 | 1515671 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quantum transport in a mesoscopic ring: Evidence of an OR gate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We explore the OR gate response in a mesoscopic ring threaded by a magnetic flux Ï. The ring is symmetrically attached to two semi-infinite one-dimensional metallic electrodes, and two gate voltages, Va and Vb, are applied in one arm of the ring; these are treated as the two inputs of the OR gate. All the calculations are based on the tight-binding model and the Green's function method, which numerically compute the conductance-energy and current-voltage characteristics as functions of the gate voltages, ring-to-electrode coupling strengths and magnetic flux. Our theoretical study shows that, for Ï=Ï0/2 (Ï0=ch/e, the elementary flux-quantum), a high output current (1) (in the logical sense) appears if one or both the inputs to the gate are high (1), while if neither input is high (1), a low output current (0) appears. It clearly demonstrates the OR gate behavior, and this aspect may be utilized in designing an electronic logic gate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 39â40, October 2009, Pages 1684-1688
Journal: Solid State Communications - Volume 149, Issues 39â40, October 2009, Pages 1684-1688
نویسندگان
Santanu K. Maiti,