کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594496 | 1515664 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved electrical properties of Pr-doped SrTiO3 films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Sr1−xPrxTiO3 films were prepared by metal organic deposition method on (111) Pt/Ti/SiO2/Si substrates. Pr-doping greatly improves the dc leakage behavior of the films. The samples with x=0.075x=0.075 show excellent electric field frequency and temperature stability of dielectric properties, while the x=0.025x=0.025 samples indicate an obvious dielectric relaxation behavior and better polarization versus applied electric field (PP–EE) hysteresis loops. These peculiar electrical properties can be explained mainly by the Pr-doping-induced changes in the free charge carriers, the lattice distortion, the charge transfer process and polar nanoregions. In addition, the variable valence of Pr ions may also have significant impacts.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 5–6, February 2010, Pages 267–270
Journal: Solid State Communications - Volume 150, Issues 5–6, February 2010, Pages 267–270
نویسندگان
Xiaofei Wang, Xiaomei Lu, Yuyan Weng, Wei Cai, Xiaobo Wu, Yunfei Liu, Fengzhen Huang, Jinsong Zhu,