Quantum size effect in the resistivity of bismuth nanowires

Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under an uniaxial strain at T=4.2K. The amplitude of the oscillations is significant (38%) at helium temperature and becomes smearing at T=77K. The observed oscillations originate from quantum size effect.A simple evaluation of the period of oscillations allows us to identify the groups of carriers involved in the transport. The calculated periods of 42.2 and 25.9 nm approximately satisfy the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.