کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594542 | 1515666 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved resistive switching properties in Ti/TiOx/La0.7Ca0.3MnO3/Pt stacked structures
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A TiOx layer (â¼20nm) was designed and introduced by a pulse laser deposition method to simulate the TiOx layer that developed naturally when the Ti top electrode was deposited on a La0.7Ca0.3MnO3 (LCMO) film. Comparing Ti/LCMO/Pt structures with those of Ti/TiOx/LCMO/Pt, we found that the inserted TiOx layer between the Ti top electrode and the LCMO film improves the resistive switching (RS) properties. The Ti/TiOx/LCMO/Pt structure shows a large junction resistance (â¼32kΩ), large RHRS/RLRS ratio (â¼10), and good endurance (>80 cycles). This improvement of RS properties may be mainly attributed to the modification of the n-p junction barrier width at the TiOx/LCMO interface due to the oxidation/reduction of an interfacial TiOx layer adjacent to the LCMO layer. In addition, the results of pulse measurements also show an improvement of RS properties in Ti/TiOx/LCMO/Pt structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 1â2, January 2010, Pages 137-141
Journal: Solid State Communications - Volume 150, Issues 1â2, January 2010, Pages 137-141
نویسندگان
X.J. Liu, X.M. Li, Q. Wang, W.D. Yu, R. Yang, X. Cao, X.D. Gao, L.D. Chen,