کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1594602 1515667 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
NOR gate response in a double quantum ring: An exact result
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
NOR gate response in a double quantum ring: An exact result
چکیده انگلیسی

NOR gate response in a double quantum ring, where each ring is threaded by a magnetic flux ϕϕ, is investigated. The double quantum ring is sandwiched symmetrically between two semi-infinite one-dimensional metallic electrodes, and two gate voltages, namely, VaVa and VbVb, are applied, respectively, in lower arms of the two rings those are treated as the two inputs of the NOR gate. A simple tight-binding model is used to describe the system, and all the calculations are done through the Green’s function formalism. Here we calculate exactly the conductance–energy and current–voltage characteristics as functions of the ring-to-electrode coupling strengths, magnetic flux and gate voltages. Our numerical study predicts that, for a typical value of the magnetic flux ϕ=ϕ0/2ϕ=ϕ0/2 (ϕ0=ch/eϕ0=ch/e, the elementary flux-quantum), a high output current (1) (in the logical sense) appears if both the inputs to the gate are low (0), while if one or both are high (1), a low output current (0) results. It clearly demonstrates the NOR gate behavior, and this aspect may be utilized in designing an electronic logic gate.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 47–48, December 2009, Pages 2146–2150
نویسندگان
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