Faraday rotation in indium doped Cd1−xMnxTe single crystals

Faraday rotation in indium (In) doped Cd1−xMnxTe (CMT) single crystals is studied for the first time at room temperature. We extend a multioscillator model for the Faraday rotation of In doped CMT (CMT: In) by using an analytical expression for the refractive index that includes the contributions from interband transitions at the Γ, L and X points of the Brillouin zone as well as the contribution from transition caused by doping. Based on the band gap at the Γ-point in the Brillouin zone (E0) and EDA gap caused by doping, a simple energy level distribution model is put forward. Finally, the results of the PL spectra verify the existence of the EDA.