Quantum transport in an ultra-thin SOI MOSFET: Influence of the channel thickness on the I–V characteristics

Quantum mechanical features of the electron transport in a SOI MOSFET are described within the Wigner function formalism which explicitly deals with electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO2 interface. The calculated device characteristics are obtained as a function of the thickness of the semiconductor layer. An analysis of the I–V characteristics of the MOSFET shows a substantial reduction of the short-channel effect with a decrease in the channel thickness of the device.