کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1594843 1515684 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
First principle study on the electronic structure of fluorine-doped SnO2
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
First principle study on the electronic structure of fluorine-doped SnO2
چکیده انگلیسی

The electronic properties of fluorine-doped SnO2 films were calculated using the plane-wave-based pseudopotential method based on the density functional theory within the local density approximation. The calculated band structure and density of states show that the band gap of SnO2 narrows due to the presence of the F impurity energy levels in the bottom of the conduction band. The energy of the valence electrons is reduced as the optical absorption edge shifts towards a higher frequency. The charge density and effective masses of carriers of fluorine-doped SnO2 were also calculated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 13–14, April 2009, Pages 527–531
نویسندگان
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