کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594843 | 1515684 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First principle study on the electronic structure of fluorine-doped SnO2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electronic properties of fluorine-doped SnO2 films were calculated using the plane-wave-based pseudopotential method based on the density functional theory within the local density approximation. The calculated band structure and density of states show that the band gap of SnO2 narrows due to the presence of the F impurity energy levels in the bottom of the conduction band. The energy of the valence electrons is reduced as the optical absorption edge shifts towards a higher frequency. The charge density and effective masses of carriers of fluorine-doped SnO2 were also calculated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 13–14, April 2009, Pages 527–531
Journal: Solid State Communications - Volume 149, Issues 13–14, April 2009, Pages 527–531
نویسندگان
Jian Xu, Shuiping Huang, Zhanshan Wang,