کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594891 | 1515659 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interband optical transitions of an InAs/InGaAs dots-in-a-well structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Interband optical transitions of an InAs/InGaAs dots-in-a-well structure Interband optical transitions of an InAs/InGaAs dots-in-a-well structure](/preview/png/1594891.png)
چکیده انگلیسی
The interband optical transitions of InAs/InxGa1−xAs dots-in-a-well (DWELL) structure is investigated theoretically and compared with experiment. The electronic structure was obtained by solving a steady-state effective-mass Schrödinger equation in cylindrical co-ordinates taking into account the strain effects. Optical transition energies as well as envelope functions of both electron and hole are calculated, respectively. The simulated transition energies agree very well with the experimental results. Our investigation is significant not only for the understanding of the optical properties of this novel material system, but also for the guidance of optimal structure design and growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 15–16, April 2010, Pages 707–710
Journal: Solid State Communications - Volume 150, Issues 15–16, April 2010, Pages 707–710
نویسندگان
Rui Chen, H.Y. Liu, H.D. Sun,