کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1594897 1515659 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes
چکیده انگلیسی

Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n-type behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2–3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 150, Issues 15–16, April 2010, Pages 734–738
نویسندگان
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