کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1594930 1515673 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Polarization memory in single quantum dots
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Polarization memory in single quantum dots
چکیده انگلیسی

We measured the polarization memory of excitonic and biexcitonic optical transitions from single quantum dots at either positive, negative or neutral charge states. Positive, negative and no circular or linear polarization memory was observed for various spectral lines, under the same quasi-resonant excitation below the wetting layer bandgap. We developed a model which explains both qualitatively and quantitatively the experimentally measured polarization spectrum for all these optical transitions. We consider quite generally the loss of spin orientation of the photogenerated electron–hole pair during their relaxation towards the many-carrier ground states. Our analysis unambiguously demonstrates that while electrons maintain their initial spin polarization to a large degree, holes completely dephase.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 35–36, September 2009, Pages 1493–1497
نویسندگان
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