کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595010 | 1515712 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Time photocurrent response and the density of localised states in disordered semiconductors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
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چکیده انگلیسی
The Time Photocurrent Response (TPR) of a disordered semiconductor to a step-like super-gap excitation is examined by numerical simulation under the assumption of one carrier (electron) multiple-trapping and transport, using exponential and featured model density of localised states g(E). A 'plateau' feature in the TPR, followed by a rapid increase and a subsequent turn over to a steady state level, is observed. This is correlated to the Gaussian 'bump' feature of g(E) by studying the relative change with time of the net trapping and recombination rates. The simulation results are validated for a typical photosensitive disordered semiconductor, the a-SiH.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 145, Issues 5â6, February 2008, Pages 316-320
Journal: Solid State Communications - Volume 145, Issues 5â6, February 2008, Pages 316-320
نویسندگان
A. Merazga, M. Herbane,