کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595145 | 1515670 | 2009 | 4 صفحه PDF | دانلود رایگان |
Zn–In–Sn–O (ZITO) films have been grown by rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto glass substrate. X-ray diffraction analysis shows that the microstructure is amorphous below the substrate temperature of 250 ∘C. The films exhibit sheet resistance as low as 16.7 Ω/□ and optical transparency comparable to grater than that of Sn-doped indium oxide (ITO) films. The work function ranged 5.05–5.19 eV, which is a higher work function compared to ITO (4.7 eV). The fabricated ZITO films are used in fabrication of organic light-emitting diodes (OLEDs). The ZITO anode with the zinc content of 12.5 at.% [Zn/(Zn+In+Sn)] fabricated at 250 ∘C-based OLED shows lower turn-on voltage and higher current density compared to that of ITO-based control device.
Journal: Solid State Communications - Volume 149, Issues 41–42, November 2009, Pages 1731–1734