Mn doping concentration dependent p-d hybridization in Ga1−xMnxN

The 3d electronic states of transition-metal Mn dopants in Ga1−xMnxN have been investigated by Mn L-edge X-ray absorption spectroscopy (XAS) measurements. Through the XAS analysis, the valence of the Mn ions is determined. With the increase of doping concentration, the integrated intensities of L2,3 vary not monotonously, but increase first and then decrease. The relationship between the Mn doping concentration and the degree of p-d hybridization is discussed.