کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595270 | 1515681 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The electronic conduction mechanism in magnesium-doped Ba0.4Sr0.6TiO3 thin films for varactor application
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Sol-gel derived magnesium-doped ferroelectric Ba0.4Sr0.6TiO3 (with Mg dopant to be 5 mol%, 10 mol%, and 15 mol% ) (BSMT) thin films are deposited on Pt(111)/Ti/SiO2/Si(100) substrate and annealed at 650 âC, 700 âC, and 750 âC, respectively. In the low field (<115 kV/cm), the electrical conduction leakage behavior was investigated by considering the Schottky current model and the Schottky-limited current model in this paper. The extracted values of optical dielectric constant ε reveal the experiment results agree well with the Schottky-limited current model for low voltage. At higher voltage, the space-charge-limited conduction (SCLC) mechanism was also shown. In conclusion, Schottky-limited current mechanism and SCLC are given for the electrical conduction leakage behavior in the Mg-doped BST thin film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 19â20, May 2009, Pages 806-809
Journal: Solid State Communications - Volume 149, Issues 19â20, May 2009, Pages 806-809
نویسندگان
M.H. Tang, W.F. Zhao, F. Yang, H.Y. Xu, Z.H. Sun, J. Zhang, W. Shu, G.J. Dong, J.W. Hou, Y.G. Xiao, Y.C. Zhou, J. He,