The effect of the bias on the electron transport properties in a magnetic double-barrier nanostructure

In this paper, the effect of the bias on the electron transport is in detail studied in a magnetic double-barrier nanostructure. The large spin-polarization can be achieved in such a device, and the degree of the spin-polarization is strongly dependent on the applied bias. We also found that the transmission probability periodically changes with the increase of the separation LL between the two adjacent magnetic fields. These interesting properties may provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a bias-tunable spin filter.