کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595403 | 1515699 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect](/preview/png/1595403.png)
چکیده انگلیسی
We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner–Wohlfarth model. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 147, Issues 7–8, August 2008, Pages 309–312
Journal: Solid State Communications - Volume 147, Issues 7–8, August 2008, Pages 309–312
نویسندگان
Sun-young Yea, S.J. Chung, Hyunji Son, D.Y. Shin, Sanghoon Lee, X. Liu, J.K. Furdyna,