کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595630 | 1515724 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
New shallow donor centres in high-purity Czochralski-grown silicon single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: New shallow donor centres in high-purity Czochralski-grown silicon single crystals New shallow donor centres in high-purity Czochralski-grown silicon single crystals](/preview/png/1595630.png)
چکیده انگلیسی
Two new shallow donor centres NSD(i) and NSD(ii) with binding energies of 38.32Â meV and 40.09Â meV, respectively, were observed in n-type high-purity Czochralski-grown silicon single crystals by means of high-resolution photothermal ionization spectroscopy. Their spectral features and the temperature dependence of the intensity of their spectral lines imply that they are two new independent hydrogenic shallow donors. Low magnetic field investigations were performed to support our statement. The existence of the new donor centres seems to be related to the micro-defects in the sample.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 142, Issues 1â2, April 2007, Pages 71-74
Journal: Solid State Communications - Volume 142, Issues 1â2, April 2007, Pages 71-74
نویسندگان
C.H. Yu, B. Zhang, Y.J. Li, W. Lu, X.C. Shen,