کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595673 | 1645419 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of composition modulation on the structural and optical properties of Si/Ge bilayers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report structural as well as optical studies on Si/Ge bilayer structures having different individual layer thicknesses. The Raman spectrum of [Ge (5 nm)/Si (5 nm)] bilayer structure shows amorphous nature, while the [Si (5 nm)/Ge (5 nm)] bilayer structure shows a mixed nanocrystalline/amorphous behaviour of the layers. As the thickness of the individual layers increases to 10 nm, the introduction of large number of Si atoms at the interface results in reduction of Ge crystallization as well as higher intensity of interfacial SiGe alloy formation. This may be regarded as a consequence of the island growth induced surface roughening in the later case (i.e. in [Si (10 nm)/Ge (10 nm)] bilayer) as also revealed by corresponding atomic force microscopy (AFM) images. These results are also supported by Photoluminescence (PL) spectra recorded using two different photon energies of 300 and 488 nm along with the optical absorption measurements giving higher values of band gap as compared to their corresponding bulks, revealing the effect of quantum confinement in the deposited layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 1â2, January 2009, Pages 25-30
Journal: Solid State Communications - Volume 149, Issues 1â2, January 2009, Pages 25-30
نویسندگان
S. Tripathi, A. Sharma, S.M. Chaudhari, T. Shripathi,