کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1595765 1002790 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Bipolariton laser emission from a GaAs microcavity
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Bipolariton laser emission from a GaAs microcavity
چکیده انگلیسی
Biexciton emission properties were studied in a single GaAs quantum well semiconductor planar microcavity by photoluminescence measurements at low temperatures. At high pump intensity a bipolariton emission appears close to the lower polariton mode. This new mode appears when we detune the cavity resonance out of the lower polariton branch, showing a laser-like behavior. Very small linewidths were measured, lying below 110 μeV and 150 μeV for polariton and bipolariton emission respectively. The input/output power (I/O) measurements show that the bipolariton emission has a weaker coupling efficiency compared to previous results for polariton emission. Varying the pump laser polarization, we were able to show the selection rules for the biexciton particle creation in the quantum well. Simultaneous photoluminescence and near-field measurements show that the polariton and bipolariton emission are spectrally and spatially separated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 143, Issue 3, July 2007, Pages 166-170
نویسندگان
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