کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595791 | 1515711 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Band structure anisotropy effects on the ultrafast electron transport in 4H-SiC
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We study band structure anisotropy effects on the electron transport transient in 4H-SiC subjected to electric fields parallel and perpendicular to the c-axis direction. Coupled Boltzmann-like energy-momentum balance transport equations are solved numerically within a single equivalent isotropic valley picture in the momentum and energy relaxation time approximation. The electron drift velocity is shown to be higher in the direction parallel to the c-axis than that perpendicular to it, due to the electron effective mass being larger in the former direction. The ultrafast transport regime develops on a subpicosecond scale (â²0.2 ps) in both directions, during which an overshoot in the electron drift velocity is observed at 300Â K for sufficiently high enough electric fields (> 60Â kV/cm).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 145, Issues 7â8, February 2008, Pages 397-400
Journal: Solid State Communications - Volume 145, Issues 7â8, February 2008, Pages 397-400
نویسندگان
F.F. Jr., E.W.S. Caetano, J.A.P. da Costa, V.N. Freire,