کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1595830 1515725 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers
چکیده انگلیسی

Ni–Si Schottky barriers are fabricated by electrodeposition using nn on n+n+ Si substrates. I–VI–V, C–VC–V and low temperature I–VI–V measurements are presented. A high-quality Schottky barrier with extremely low reverse leakage current is revealed. The results are shown to fit an inhomogeneous barrier model for thermionic emission over a Schottky barrier proposed by Werner and Guttler [J.H. Werner, H.H. Guttler, Barrier inhomogeneities at Schottky contacts, J. Appl. Phys. 69 (3) (1991) 1522–1533]. A mean value of 0.76 V and a standard deviation of 66 mV is obtained for the Schottky barrier height at room temperature with a linear bias dependence. X-ray diffraction and scanning electron microscopy measurements reveal a polycrystalline Ni film with grains that span from the Ni–Si interface to the top of the Ni layer. The variation in Ni orientation is suggested as a possible source of the spatial distribution of the Schottky barrier height.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 140, Issues 11–12, December 2006, Pages 508–513
نویسندگان
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