کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595834 | 1515725 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tunable anticrossing of gated and ungated plasma resonances and enhancement of interlayer terahertz electric field in an asymmetric bilayer of density-modulated two-dimensional electron gases
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We study theoretically the terahertz (THz) response of a bilayer of density-modulated two-dimensional electron gases, which we employ to model the actual double-quantum-well electron channel of a grid-gated field-effect transistor in which strong THz photoresponse was recently observed. We have shown that such a system can be driven into the anticrossing regime between gated and ungated plasma resonances by tuning the gate voltage. The amplitude of the interlayer THz electric field in the ungated (double-layered) portions of the channel increases dramatically in the anticrossing regime. This strong interlayer THz electric field may strongly affect interlayer electron tunneling which, in turn, may contribute to the physical mechanism underlying the strong THz photoresponse observed in recent experiments.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 140, Issues 11â12, December 2006, Pages 529-532
Journal: Solid State Communications - Volume 140, Issues 11â12, December 2006, Pages 529-532
نویسندگان
V.V. Popov, G.M. Tsymbalov, N.J.M. Horing,