Magnetic properties of Mn+-implanted and annealed Si1−xGex thin films grown on p-Si (100) substrates

Mn+-implanted and annealed Si1−xGex thin films grown on p-Si (100) substrates were formed with the goal of producing (Si1−xGex)1−yMny with a high ferromagnetic transition temperature (Tc). The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si1−xGex thin films were single crystalline. The magnetization curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mn+-implanted and annealed Si1−xGex thin films, and the magnetization curves as functions of the temperature showed that the Tc value was above 300 K. These results indicate that the formed (Si1−xGex)1−yMny thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.