کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1595989 | 1515703 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First-principles calculation of the electronic structure of HfTe5
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
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چکیده انگلیسی
The electronic structure of HfTe5 has been calculated within density functional theory using a self-consistent full-potential linearized augmented plane wave plus a local orbital method incorporated in WIEN2k. Spin–orbit interaction (SOI) was incorporated using a second variational procedure. The exchange correlation potential was computed with the Perdew–Burke–Ernzerhof (PBE) generalized gradient approximation (GGA). The obtained density of states indicates that HfTe5 is a semimetal, which is in accordance with the experimental results. The valence bands near the Fermi level originate primarily from the Te atoms. The valence charge density was also obtained to understand the bonding characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 146, Issues 11–12, June 2008, Pages 454–457
Journal: Solid State Communications - Volume 146, Issues 11–12, June 2008, Pages 454–457
نویسندگان
M.W. Oh, B.S. Kim, S.D. Park, D.M. Wee, H.W. Lee,