کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596049 | 1515728 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pressure dependence of Tc and Hc2 of a dirty two-gap superconductor, carbon-doped MgB2
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have measured Tc and Hc2(T) of carbon-doped MgB2 under hydrostatic pressures up to 15.6Â kbar. dTc/dP is determined to be â0.20Â K/kbar and Hc2(T=0) decreases with pressure at a rate that is consistent with the theoretical value for pure MgB2, dHc2/dP=â0.036T/kbar. By analyzing our results within the theoretical framework of a dirty two-gap supersonductor, we determine values for the interband coupling and the ratio between the diffusivities associated with the two bands at three different pressures. We also extract the diffusivities and coherence lengths associated with each band. Finally, we estimate the pressure dependence of the charge carrier concentration in the Ï band to be dlnn/dP=â0.013/kbar.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 140, Issues 3â4, October 2006, Pages 163-166
Journal: Solid State Communications - Volume 140, Issues 3â4, October 2006, Pages 163-166
نویسندگان
Xiaosheng Huang, W. Mickelson, B.C. Regan, Steve Kim, A. Zettl,