کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1596049 1515728 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Pressure dependence of Tc and Hc2 of a dirty two-gap superconductor, carbon-doped MgB2
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Pressure dependence of Tc and Hc2 of a dirty two-gap superconductor, carbon-doped MgB2
چکیده انگلیسی
We have measured Tc and Hc2(T) of carbon-doped MgB2 under hydrostatic pressures up to 15.6 kbar. dTc/dP is determined to be −0.20  K/kbar and Hc2(T=0) decreases with pressure at a rate that is consistent with the theoretical value for pure MgB2, dHc2/dP=−0.036T/kbar. By analyzing our results within the theoretical framework of a dirty two-gap supersonductor, we determine values for the interband coupling and the ratio between the diffusivities associated with the two bands at three different pressures. We also extract the diffusivities and coherence lengths associated with each band. Finally, we estimate the pressure dependence of the charge carrier concentration in the σ band to be dlnn/dP=−0.013/kbar.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 140, Issues 3–4, October 2006, Pages 163-166
نویسندگان
, , , , ,