کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596098 | 1002805 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate](/preview/png/1596098.png)
چکیده انگلیسی
We report the growth of well-ordered InAs QD chains by molecular beam epitaxy system. In order to analyze and extend the results of our experiment, a detailed kinetic Monte Carlo simulation is developed to investigate the effects of different growth conditions to the selective growth of InAs quantum dots (QDs). We find that growth temperature plays a more important role than growth rate in the spatial ordering of the QDs. We also investigate the effect of periodic stress on the shape of QDs in simulation. The simulation results are in good qualitative agreement with our experiment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 137, Issue 11, 2006, Pages 630–633
Journal: Solid State Communications - Volume 137, Issue 11, 2006, Pages 630–633
نویسندگان
Chang Zhao, Y.H. Chen, C.X. Cui, B. Xu, L.K. Yu, W. Lei, J. Sun, Z.G. Wang,