کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596113 | 1002806 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effective Landé factor g∗g∗ of conduction electrons in GaAs and AlSb
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Using third and fourth order perturbation theory inside a 14-band and 30-band k ⋅ p model, we have calculated the effective Landé factor g∗g∗ of Γ6CΓ6C conduction electrons in GaAs and AlSb. A strong variation between both models is observed. We show that the 14-band formalism even in fourth order perturbation theory is not sufficient to predict an experimental data of g∗g∗. However, results deduced by the 30-band k ⋅ p model are consistent with experimental data. In particular, the k ⋅ p Hamiltonian parameters are adjusted such that the g∗g∗ of GaAs and AlSb are respectively −0.391 and 0.81, in excellent agreement with the experimental values of −0.44 and 0.84.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 142, Issue 6, May 2007, Pages 342–345
Journal: Solid State Communications - Volume 142, Issue 6, May 2007, Pages 342–345
نویسندگان
N. Fraj, S. Ben Radhia, K. Boujdaria,