Charge retention and optical properties of Ge nanocrystals embedded in GeO2 matrix

Germanium (Ge) nanocrystals (NCs) have attracted a lot of attention due to their excellent optical properties. In this paper we report on the formation of Ge nanoparticles embedded in GeO2 matrix by electron beam evaporation and subsequent annealing. Charge retention properties of Ge NCs thus synthesized are also investigated. Fourier transform infrared (FTIR) spectroscopic studies are carried out to verify the evolution of the NCs. Micro-Raman analysis also confirms the formation of Ge nanoparticles in the annealed films. Development of Ge nanoparticles is established by photoluminescence (PL) analysis. The memory effect of Ge NCs is revealed by the hysteresis in the capacitance–voltage (C–VC–V) curves of the fabricated metal-oxide-semiconductor (MOS) structure containing Ge NCs.