کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596237 | 1515723 | 2007 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Quantum Hall effect in graphene Quantum Hall effect in graphene](/preview/png/1596237.png)
The quantum Hall (QH) effect in two-dimensional electron and hole gas is studied in high quality graphene samples. Graphene samples whose lateral size ∼10 μm were fabricated into mesoscopic devices for electrical transport measurement in magnetic fields. In an intermediate field range of up to 10 T, a distinctive half-integer QH effect is discovered with QH plateaus appearing at a filling factor sequence, ν=4(n+1/2)ν=4(n+1/2), where nn is the Landau level (LL) index. As the magnetic field increases to the extreme quantum limit, we observe additional QH plateaus at filling factors ν=0,±1,±4ν=0,±1,±4. Further detailed investigations show that the presence of the ν=0,±1ν=0,±1 QH states indicates the n=0n=0 LL at the charge neutral Dirac point splits into four sublevels. This lifts both the sublattice and the spin degeneracy, while the QH states at ν=±4ν=±4 can be attributed to lifting of the spin degeneracy of the LLs. Above 30 T of magnetic field, the large quasiparticle gaps between the n=0n=0 and n=±1n=±1 LLs lead to the QH effect that can be observed even at room temperature.
Journal: Solid State Communications - Volume 143, Issues 1–2, July 2007, Pages 14–19