Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon

The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters ββ and ττ involved in the function are estimated as a function of saturated dangling bond density Nss. The experimental values of ββ, ττ, and Nss are compared with those calculated based on our model of light-induced defect creation in a-Si:H.