کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596447 | 1002825 | 2007 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Low temperature magnetoresistance of Al-doped ZnO films Low temperature magnetoresistance of Al-doped ZnO films](/preview/png/1596447.png)
The magnetoresistances of aluminum-doped zinc oxide thin films with thickness of 463.63, 203.03, and 66.85 nm were measured at low temperatures from 2.5 to 30 K. It is found that the samples exhibit negative magnetoresistance at all measuring temperatures. However, neither the three-dimensional nor the two-dimensional weak-localization theories can reproduce the behavior of the magnetoresistance. We find that the magnetoresistance of the three films can be well described by a semiempirical expression that takes into account the third order s–ds–d exchange Hamiltonians describing a negative part and a two-band model for the positive contribution. This strongly suggests that the negative magnetoresistance in ZnO:Al film originates from the scattering of conduction electrons due to localized magnetic moments.
Journal: Solid State Communications - Volume 141, Issue 7, February 2007, Pages 394–397