کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1596565 1002833 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Argon ion-dissipated energy on atomic driving in zinc-VIA films growth
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Argon ion-dissipated energy on atomic driving in zinc-VIA films growth
چکیده انگلیسی

Under an assumption of rectilinear trajectories for the projectile into a solid surface, a distinct expression for the ‘energy window’ of the driving atoms in a monolayer has been drawn for different ion-target systems, in which the atomic displacements take place primarily in the surface layer, while the subsurface layer is kept undamaged. This approach of determining the appropriate energy interval to enhance the mobility of adatom is applied to ion-assisted growth of zinc sulfide (ZnS), zinc selenide (ZnSe), and zinc telluride (ZnTe) epitaxial layers, respectively. The calculating results are in good agreement with the experimental observation of ZnTe semiconductor materials in the energetic cluster beam.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 137, Issue 8, February 2006, Pages 413–416
نویسندگان
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