کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1596737 1002845 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Charge accumulation in ultrathin Cs / n - GaN and Cs / n - InGaN interfaces
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Charge accumulation in ultrathin Cs / n - GaN and Cs / n - InGaN interfaces
چکیده انگلیسی

We report on the observation of new phenomena that arise under Cs adsorption on nn-GaN(0001) and nn-InGaN(0001) surfaces. First, an extremely highly quantum efficient photoemission has been found by excitation with visible light in the transparency region of GaN and InGaN. The photoemission is revealed to appear due to the formation of an electron accumulation layer in the vicinity of the surfaces. Second, a large variety of band bending and potential wells are provided by the Cs coverages. The accumulated charge density at the nn-InGaN surface is much stronger than that at the nn-GaN surface. Third, a new effect is revealed, namely, the appearance of an oscillation structure in the spectral dependences of the threshold photoemission. A model concept is proposed for photocurrent oscillations that takes into account the formation of an accumulation layer and the multiple-beam interference in parallel-sided GaN or InGaN samples.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 143, Issue 10, September 2007, Pages 476–480
نویسندگان
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