کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596752 | 1002848 | 2006 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Band-edge exciton transitions in (Ga1−xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition Band-edge exciton transitions in (Ga1−xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition](/preview/png/1596752.png)
(Ga1−xMnx)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga1−xMnx)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga1−xMnx)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga1−xMnx)N thin films appeared. These results indicate that the (Ga1−xMnx)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum.
Journal: Solid State Communications - Volume 138, Issue 9, June 2006, Pages 444–447