کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596771 | 1002849 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characterization of CdS/Si coaxial nanowires
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CdS/Si coaxial nanowires were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale. Their crystallinities, general morphologies and detailed microstructures were characterized by using X-ray diffraction, scanning electron microscope, transmission electron microscope and Raman spectra. The CdS core crystallizes in a hexagonal wurtzite structure with lattice constants of a=0.4140Â nm and c=0.6719Â nm, and the Si shell is amorphous. Five Raman peaks from the CdS core were observed. They are 1LO at 305Â cmâ1, 2LO at 601Â cmâ1, A1-TO at 212Â cmâ1, E1-TO at 234Â cmâ1, and E2 at 252Â cmâ1. Photoluminescence measurements show that the nanowires have two emission bands around 510 and 590Â nm, which originate from the intrinsic transitions of CdS cores and the amorphous Si shells, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 138, Issue 3, April 2006, Pages 139-142
Journal: Solid State Communications - Volume 138, Issue 3, April 2006, Pages 139-142
نویسندگان
X.L. Fu, L.H. Li, W.H. Tang,