کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596893 | 1002862 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Field emission and photoluminescence characteristics of ZnS nanowires via vapor phase growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Large-area ZnS nanowires were synthesized through a vapor phase deposition method. X-ray diffraction and electron microscopy results show that the products are composed of single crystalline ZnS nanowires with a cubic structure. The nanowires have sharp tips and are distributed uniformly on silicon substrates. The diameter of the bases is in the range of 320-530Â nm and that of the tips is around 20-30Â nm. The strong ultraviolet emission in the photoluminescence spectra also demonstrates that the ZnS nanowires are of high crystalline perfection. Field emission measurements reveal that the ZnS nanowires have a fairly low threshold field, which may be ascribed to their very sharp tips, rough surfaces and high crystal quality. The perfect field emission ability of the ZnS nanowires makes them a promising candidate for the fabrication of flexible cold cathodes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 142, Issue 5, May 2007, Pages 295-298
Journal: Solid State Communications - Volume 142, Issue 5, May 2007, Pages 295-298
نویسندگان
Yongqin Chang, Mingwei Wang, Xihong Chen, Saili Ni, Weijing Qiang,