Solid state ion trap: Lateral confinement of quantum well excitons by oscillating piezoelectric field

We theoretically investigate a new type of lateral trap that can be used to confine quantum well excitons. By sending an ultrahigh frequency bulk acoustic wave from the substrate of III-V semiconductors such as GaAs or GaN, an oscillating piezoelectric field is generated. The effective potential induced by the oscillating piezoelectric field implements a type I lateral trap. Such a controllable quantum confinement is essential in many semiconductor nano-electronics and nano-photonics applications.