Field dependence of hole mobility in TPD-doped polystyrene

Field and temperature dependence of hole mobility in NN,N′N′-diphenyl-NN,N′N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine (TPD) doped in polystyrene (PS) is studied using the transient photoconductivity technique. We observe both the positive and negative field dependence of mobility with increasing field and temperature. The field and temperature at which negative field dependence begins is low compared with earlier reports on similar systems (with 20 wt% dopant concentration). Results are discussed on the basis of the Gaussian disorder model (GDM), which predicts that the interplay of both the energetic and positional disorder of dopant molecules in the sample decides the slope of the logμlogμ versus E1/2E1/2 plot. The observed mobility dependence is rationalized on the basis of low energetic disorder in the sample. The reason for low energetic disorder is purely due to the film morphology of the sample. Even for a dopant concentration of 20 wt%, we observe clustering and chaining of TPD molecules, which may provide low energetic and positional disorder.