کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1600041 | 1515855 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic properties of CeRh1âxGexIn; evolution from an intermediate-valence to a localized 4f-state
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We examined how electronic properties of the intermediate-valent CeRhIn are influenced by gradual substitution of rhodium with germanium. Results of specific-heat, magnetic susceptibility, electrical resistivity, thermopower and X-ray photoelectron spectroscopy (XPS) measurements performed in wide range of temperature and magnetic field on polycrystalline samples of CeRh1âxGexIn, for x = 0.1, 0.2 and 0.3, are presented and compared to corresponding data reported earlier for CeRhIn, its hydrides and CePdxRh1âx In solutions. A systematic shift from the intermediate-valence to a localized 4f-state with increasing content of germanium is evident from all obtained results. Non-Fermi liquid state is formed at low temperatures for the solution with the lowest Ge content, but it is destroyed by magnetic field and/or further doping with Ge.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Intermetallics - Volume 56, January 2015, Pages 101-106
Journal: Intermetallics - Volume 56, January 2015, Pages 101-106
نویسندگان
P. WiÅniewski, V.I. Zaremba, A. Ålebarski, D. Kaczorowski,