کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1600266 1515875 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An investigation of Ti-43Al-9V/Ti-6Al-4V interface by diffusion bonding
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
An investigation of Ti-43Al-9V/Ti-6Al-4V interface by diffusion bonding
چکیده انگلیسی

Ti-43Al-9V/Ti-6Al-4V joints were fabricated by vacuum hot pressing under 920 °C/45 MPa/2 h. After fabrication the joints were thermally exposed in vacuum at 920 °C for 5 h and 17 h, and at 1100 °C for 1 h. The interfaces of both the as-prepared and the thermally exposed joints were analyzed by means of optical microscope, scanning electron microscope, electron backscatter diffraction system and energy dispersive spectrometer. The results indicate that sound joints can be achieved under 920 °C/45 MPa/2 h, and the interfacial phase sequence of the as-prepared joints was identified as Ti-43Al-9V/γ(TiAl)/B2 (the ordered form of β-Ti phase)/α2(Ti3Al)/α(Ti)/Ti-6Al-4V. The thickness of the interfacial zone increased with the duration of thermal exposure at 920 °C. Furthermore, the interfacial zone thickened rapidly when the joints were thermally exposed at temperature above the phase transformation point (α-Ti → β-Ti) of Ti-6Al-4V. In this paper, the interface growth way was also discussed based on the locations of the refractory phase YAl2 and microvoids. The analysis of the thermally exposed joints confirmed the correctness of the interface growth way. Moreover, elemental diffusion mechanism was discussed in this paper.


► Sound TiAl/TC4 joint was achieved with hot pressing parameters 920 °C/45 MPa/2 h.
► The interfacial phase sequence of the as-prepared joint is TiAl/γ/B2/α2/α/TC4.
► Interface growth way was established using the tags of YAl2 and microvoids.
► The interface intruded into the TiAl with a higher thickening speed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Intermetallics - Volume 36, May 2013, Pages 127–132
نویسندگان
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