کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1600502 | 1515889 | 2012 | 6 صفحه PDF | دانلود رایگان |

We have calculated the generalized stacking fault energies including the unstable stacking fault energy (γus) and the cleavage energy (γcl) at the clean and the oxygen-doped TiAl/Ti3Al interface using a first-principles method in order to investigate the mechanical properties of the interface. The [011¯](111) slip system exhibits the lowest γus and the largest γcl/γus among the selected four typical slip systems, showing that the shear deformation in this slip system is energetically favored. Oxygen at the TiAl/Ti3Al interface increases the stacking fault energies, and reduces γcl/γus for all the selected slip systems, suggesting the presence of oxygen reduce the ductility of the binary phase TiAl-Ti3Al alloy.
The shear deformation in the slip system is energetically favored, because this slip system exhibits the lowest among the selected four typical slip systems at the TiAl/Ti3Al interface. The presence of oxygen at the TiAl/Ti3Al interface leads to a reduction of the ductility, because oxygen increases the stacking fault energies, and reduces for all the selected slip systemsFigure optionsDownload as PowerPoint slideHighlights
► The presence of the Ti3Al phase can improve the ductility of the TiAl alloy.
► The shear deformation along [011¯](111) is energetically favored at the TiAl/Ti3Al interface.
► Oxygen at the TiAl/Ti3Al interface increases the stacking fault energies.
► Oxygen reduces the ratio of cleavage energy and unstable stacking fault energy.
► Oxygen reduces the ductility of the TiAl-Ti3Al alloy.
Journal: Intermetallics - Volume 22, March 2012, Pages 41–46