کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1600667 | 1005171 | 2011 | 10 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Growth mechanism of phases by interdiffusion and atomic mechanism of diffusion in the molybdenum–silicon system Growth mechanism of phases by interdiffusion and atomic mechanism of diffusion in the molybdenum–silicon system](/preview/png/1600667.png)
Tracer diffusion coefficients are calculated in different phases in the Mo–Si system from diffusion couple experiments using the data available on thermodynamic parameters. Following, possible atomic diffusion mechanism of the species is discussed based on the crystal structure. Unusual diffusion behaviour is found in the Mo5Si3 and Mo3Si phases, which indicate the nature of defects present on different sublattices. Further the growth mechanism of the phases is discussed and morphological evolution during interdiffusion is explained.
Tracer diffusion coefficients are calculated in different phases in the Mo–Si system from diffusion couple experiments using the data available on thermodynamic parameters. Following, possible atomic diffusion mechanism of the species is discussed based on the crystal structure. Unusual diffusion behaviour is found in the Mo5Si3 and Mo3Si phases, which indicate the nature of defects present on different sublattices. Further the growth mechanism of the phases is discussed and morphological evolution during interdiffusion is explained.Figure optionsDownload as PowerPoint slideHighlights
► Interdiffusion study in the Mo–Si system conducted.
► Atomic mechanism of diffusion is discussed.
► Unusual diffusion behaviour in the Mo5Si3 and MoSi3 phases is found.
► Low concentration of vacancies and antisites on Mo sublattice is indicated.
► Growth mechanism of phases is discussed.
Journal: Intermetallics - Volume 19, Issue 8, August 2011, Pages 1191–1200