کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1600931 | 1005180 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystal structures of the compounds formed in DyCo2-DyGa2 pseudo-binary system at 773Â K
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
DyCo2âxGax alloys with x from 0 to 2 were prepared by arc melting and investigated by X-ray powder diffraction. Six ternary compounds with different Ga contents x, DyCo2, DyCo1.33Ga0.67, DyCoGa, DyCo0.67-0.35Ga1.33-1.65, DyCo0.25-0.15Ga1.75-1.85, and DyGa2, were formed in the system. The crystal structures of these compounds were determined by Rietveld refinement method with TOPAS V3.0 software. The Rietveld refinements reveal that DyCo1.33Ga0.67 crystallized in the MgZn2-type structure (P63/mmc) with a = 5.414(1) and c = 8.452(1) Ã
, DyCoGa in the Co2Si-type structure (Pnma) with a = 7.052(1), b = 4.393(1) and c = 6.958(1) Ã
, DyCo0.5Ga1.5 in the GdPdSi-type structure (Imma) with a = 4.341(1), b = 7.007(1) and c = 7.551(1) Ã
, and DyCo0.2Ga1.8 in the AlB2-type structure (P6/mmm) with a = 4.339(1) and c = 3.634(1) Ã
. The relationships between these structures were discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Intermetallics - Volume 17, Issue 9, September 2009, Pages 738-743
Journal: Intermetallics - Volume 17, Issue 9, September 2009, Pages 738-743
نویسندگان
Fusheng Liu, Weiqin Ao, Li Wu, Junqin Li,