کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1601382 | 1005195 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Prediction of the glass forming ability in Cu-Zr binary and Cu-Zr-Ti ternary alloys
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
By combining CALPHAD technique with kinetic approach, we evaluated the glass forming ability(GFA) of nine compositions of Cu-Zr and thirteen of Cu-Zr-Ti alloys in terms of critical cooling rate and fragility. The driving forces for crystallization from the undercooled liquid alloys were calculated by using Turnbull and Thompson-Spaepen (TS) Gibbs free energy approximate equations, respectively. Time-temperature-transformation (TTT) curves of these alloys were obtained with Davies-Uhlmann kinetic equations based on classical nucleation theory. With Turnbull and TS equations, the critical cooling rates are calculated to be in the range of 9.78Â ÃÂ 103-8.23Â ÃÂ 105Â K/s and 4.32Â ÃÂ 102-3.63Â ÃÂ 104Â K/s, respectively, for Cu-Zr alloys, and 1.38Â ÃÂ 102-7.34Â ÃÂ 105Â K/s and 0.64-1.36Â ÃÂ 104Â K/s, respectively, for Cu-Zr-Ti alloys. The calculated fragility parameters are in the range of 6.32-9.3 for Cu-Zr binary and 5.7-8.24 ternary alloys, respectively. The comparison of the calculated results to the experimental data indicates that the cooling rate obtained with TS equation is more valid than that with Turnbull equation, and that obtained by other researchers for the evaluation of GFA. The fragility be used as parameter to evaluate relatively the GFA in an alloy system. This work suggests that the combined thermodynamic and kinetic modeling may provide an effective method for the prediction of GFA in Cu-Zr and Cu-Zr-Ti alloys.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Intermetallics - Volume 16, Issue 1, January 2008, Pages 27-33
Journal: Intermetallics - Volume 16, Issue 1, January 2008, Pages 27-33
نویسندگان
L. Ge, X. Hui, E.R. Wang, G.L. Chen, R. Arroyave, Z.K. Liu,