کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1630597 | 1516676 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth behavior of electroless copper on silicon substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth behavior of electroless copper on silicon substrate Growth behavior of electroless copper on silicon substrate](/preview/png/1630597.png)
چکیده انگلیسی
The growth behavior containing deposit morphology, growth rate, activation energy, and growth mechanism of copper on silicon substrate, especially at the initial stage, in the electroless plating process was studied. Copper was deposited on the surface of the silicon substrate in an electroless plating bath containing formalin (CH2O 37vol%) as a reducing agent at a pH value of 12.5 and a temperature of 50-75°C. The copper deposit was characterized using a field emission scanning electron microscope and transmission electron microscope. The results showed that after the activation process, nanoscale Pd particles were distributed evenly on the surface of the silicon; in the deposition process, copper first nucleated at locations not only near the Pd particles but also between the Pd particles: the growth rate of electroless Cu ranged from 0.517 nm/s at 50°C to 1.929 nm/s at 75°C. The activation energy of electroless Cu on Si was 52.97 kJ/mol.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material - Volume 14, Issue 1, February 2007, Pages 67-71
Journal: Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material - Volume 14, Issue 1, February 2007, Pages 67-71
نویسندگان
Shin-Shyan Wu, Wei-Long Liu, Ting-Kan Tsai, Shu-Huei Hsieh, Wen-Jauh Chen,