کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1630745 | 1516681 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C 1s and N 1s spectra shift to lower binding energy due to the formation of CSi and NSi bonds. The SiCN bonds were observed in the deconvolved C 1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material - Volume 13, Issue 3, June 2006, Pages 272-276
Journal: Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material - Volume 13, Issue 3, June 2006, Pages 272-276
نویسندگان
Xueming Li, Size Yang, Xingfang Wu,